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Nondestructive Readout Tunnel Diode Memory Cell

IP.com Disclosure Number: IPCOM000096575D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Stucjkert, PE: AUTHOR

Abstract

The NDRO tunnel diode memory cell in A has two resistors 1 and 3 connected in tandem between word drive line 5 and bit drive line 7 arranged in a coordinate array. A series arrangement of tunnel diode 9 and resistor 11 is connected at the junction of resistors 1 and 3 to ground. The junction of resistors 1, 3 and 11 is connected through semiconductor coupling diode 13 to sense line 15.

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Nondestructive Readout Tunnel Diode Memory Cell

The NDRO tunnel diode memory cell in A has two resistors 1 and 3 connected in tandem between word drive line 5 and bit drive line 7 arranged in a coordinate array. A series arrangement of tunnel diode 9 and resistor 11 is connected at the junction of resistors 1 and 3 to ground. The junction of resistors 1, 3 and 11 is connected through semiconductor coupling diode 13 to sense line
15.

The operation of the memory cell during read and write operations is illustrated in B. Curve X is the composite characteristic of tunnel diode 9 and resistor 11 in series. Curve Y is the characteristic of coupling diode 13. Curve Z is the composite characteristic of circuits described by curves X and Y connected in parallel. The pulse sequences for effecting read and write operations are shown in C.

The quiescent 0 and 1 operating states of the memory cell are defined by the intersection of load line 17 with curve Z. To effect a write operation, word line 5 is initially energized by pulse a to shift the load line to 19. Thus, the memory cell is switched to 0 state. If a 1 is to be written, word and bit lines 5 and 7 are subsequently energized coincidently by pulses b and b' to shift the load line to
21. Thus, the memory cell is switched to the 1 state. At this time, a write 1 signal w is produced in sense line 15. Readout is effected nondestructively by energizing word line 5 by a pulse b to shift the load line to 23.

When the interro...