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Insulating Aluminumoxide Films

IP.com Disclosure Number: IPCOM000096585D
Original Publication Date: 1963-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Mohr, TO: AUTHOR [+2]

Abstract

To improve adherence of multilayer films, an intermediate insulating layer of aluminumoxide is created in situ by slowly evaporating metallic aluminum in the presence of oxygen.

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Insulating Aluminumoxide Films

To improve adherence of multilayer films, an intermediate insulating layer of aluminumoxide is created in situ by slowly evaporating metallic aluminum in the presence of oxygen.

In the manufacture of multilayer film devices, e.g., complete thin magnetic film memory plates comprising storage cells and full wiring, the use of adherent intermediate layers is advisable. While chromium films improve the stickiness, they are conducting and cannot easily be removed by an etching process, when the striplines are brought out of a covering copper layer. This difficulty is prevented by the application of a non-conducting aluminumoxide film, between e.
g., a SiO layer and a Cu layer. During the slow evaporation of metallic aluminum, oxygen of about 10/-4/ mm Hg is admitted into the vacuum system.

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