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Electrode Caps in the Micron Range by Vacuum Deposition

IP.com Disclosure Number: IPCOM000096590D
Original Publication Date: 1963-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Seto, DK: AUTHOR

Abstract

In certain electrical devices, particularly in thin film semi-conductor devices, there are electrode gaps of minute widths. Such gaps, having widths of the same order as the thickness of the films involved, are achieved during deposition by shadowing techniques.

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Electrode Caps in the Micron Range by Vacuum Deposition

In certain electrical devices, particularly in thin film semi-conductor devices, there are electrode gaps of minute widths. Such gaps, having widths of the same order as the thickness of the films involved, are achieved during deposition by shadowing techniques.

Initially, substrate 10 has formed upon it a first conductor element 12. This has a sharply defined side 14 so as to form an abrupt step with adjacent surface 16 of substrate 10. For this purpose, element 12 can be formed by photo-etching from a more extensive film of the conductor material. For electrical purposes, the surface of element 12 can be insulated, e.g., by an anodizing process. Next, a layer of semi-conductor material 18 is deposited over the insulated element 12 by ordinary vacuum deposition techniques. This follows the step 14 and produces a corresponding-step 20. Then, substrate 10 is tipped in the vacuum chamber and a final evaporation of conductor material 22 is carried out. Because of the angle of substrate 10 during this deposition, portion 24 of the surface of semi-conductor 18 is in the shadow of step 20 and does not receive a coating. This portion 24 becomes a gap flanked by coatings 26 and 28 of electrode material 22 deposited during this portion of the process. The layers 12 and 18 can be about one micron thick. Thus, step 20 is about one micron high and gap 24 about one micron wide. An extremely close spacing between the elec...