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Browse Prior Art Database

Time Domain Selection for a Multiplanar Memory

IP.com Disclosure Number: IPCOM000096616D
Original Publication Date: 1963-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 50K

Publishing Venue

IBM

Related People

King, JH: AUTHOR [+2]

Abstract

This multiplanar memory employs storage elements exhibiting a hysteretic property, e.g., ferrite cores. Writing in or reading out information is based on a time domain selection. Each memory element is shown as a plane.

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Time Domain Selection for a Multiplanar Memory

This multiplanar memory employs storage elements exhibiting a hysteretic property, e.g., ferrite cores. Writing in or reading out information is based on a time domain selection. Each memory element is shown as a plane.

Inputs 15 and 16 are coupled to a series of memory elements 10, 11, 12... 13, the combined hysteretic states of which represent a single character. To write a character into these elements, a pulse is applied to input 15. If a bit is to be stored in element 10, a pulse is simultaneously applied to input 16 in a manner that the effect on element 10 is additive. After a time Delta t, effected by an element 20, the memory element 11 can be set by a pulse on input 16. This continues for all memory elements in a character position.

During a readout of information, the same operation is utilized except that the select line 16 has a pulse applied to it. This is of time duration sufficient to!allow the pulse on line 15 to travel all memory elements 10, 11, 12... 13. The output from each memory element is detected in a sense winding 17. Current pulses are chosen of proper polarity to set and reset the memory elements.

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