Browse Prior Art Database

Read Only Memory Using Non-Linear Resistive Elements

IP.com Disclosure Number: IPCOM000096647D
Original Publication Date: 1963-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Cole, JN: AUTHOR

Abstract

The read-only memory (A) has a plurality of word drive lines W and bit sense lines S. These are arranged in a coordinate array and interconnected at selected crossover points by nonlinear resistance elements T, e.g., THYRITE*. Current-voltage characteristics of such elements T are illustrated in B. The presence and absence of an element T at a selected crossover point is indicative of the storage of a binary 1 and a binary 0, respectively.

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Read Only Memory Using Non-Linear Resistive Elements

The read-only memory (A) has a plurality of word drive lines W and bit sense lines S. These are arranged in a coordinate array and interconnected at selected crossover points by nonlinear resistance elements T, e.g., THYRITE*. Current- voltage characteristics of such elements T are illustrated in B. The presence and absence of an element T at a selected crossover point is indicative of the storage of a binary 1 and a binary 0, respectively.

A voltage driver D having an internal impedance R is connected to each word drive line W which is terminated in a resistance R(1). Driver D and resistances R and R(1) are determined such that the amplitude of voltage drive pulse P directed along a word drive line W is substantially constant regardless of the number of elements T coupled to it. Also, a sense amplifier SA is connected to each bit sense line S which is terminated by a resistance R.

To interrogate the read-only memory, driver D is operated to apply a pulse P along corresponding word drive line W. Elements T coupled to the energized word drive line W are driven to a low resistance state, as indicated by v(1) in B, so that current i(1) is delivered to corresponding bit sense line B. The resulting energization of selected bit sense line B is sensed by sense amplifiers SA. * THYRITE is a trademark of General Electric Co.

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