Browse Prior Art Database

Miniature Memory Array

IP.com Disclosure Number: IPCOM000096662D
Original Publication Date: 1963-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Beliveau, M: AUTHOR [+2]

Abstract

Planar memory array 10 is formed from copper spheres 1 fused together to form a column 4. Word drive lines 2 are disposed orthogonally to the column. The copper column itself,4,acts as the bit drive sense line 3.

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Miniature Memory Array

Planar memory array 10 is formed from copper spheres 1 fused together to form a column 4. Word drive lines 2 are disposed orthogonally to the column. The copper column itself,4,acts as the bit drive sense line 3.

In making the array, copper spheres 1 are first aligned into a column on a fixture. The fixture is inserted in a furnace and heat is applied to fuse the spheres into an integrated copper column. Following this, the integrated column is electro or electroless plated with a nickel-iron alloy 5. An orienting field is used during the plating operation in order to orient the easy axis of each sphere circumferentially with respect to the longitudinal axis of the integrated column.

After the alloy 5 is deposited to form a magnetic element, an insulating material 6 is deposited over the plated surface of the integrated column. The integrated column is now registered over a line pattern formed from conductive material such as copper 2. This is previously etched out on a carrier such as polyethylene terephthalate to form the word device lines. As indicated, the column bit and sense lines 3 are part of the integrated copper column.

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