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Light-Actuated Semiconductor Switching Devices

IP.com Disclosure Number: IPCOM000096666D
Original Publication Date: 1963-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Yu, HN: AUTHOR

Abstract

A semiconductor device can utilize an injection electroluminescent p-n junction as a light source. This actuates a plurality of junctions of the same crystalline structure so that a low impedance path is formed between the latter junctions.

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Light-Actuated Semiconductor Switching Devices

A semiconductor device can utilize an injection electroluminescent p-n junction as a light source. This actuates a plurality of junctions of the same crystalline structure so that a low impedance path is formed between the latter junctions.

The device is made with gallium arsenide or other suitable material having a generalized, schematic configuration as shown in the left drawing. When the base-emitter junction is reversely biased, the impedance from one collector to the other is very high. When the base-emitter junction is forwardly biased, the light emission h due to the recombination radiation of injected carriers propagates through the base region to the two collector regions.

The light absorption property of these two collector junctions actuates the collector junctions into a low impedance path. Thus, when a small signal is applied, the signal is transmitted through a low impedance from one collector junction through the base region and the other collector junction to the load. The DC offset voltage should be relatively low due to the cancellation of the two opposite polarity offset voltages from the two collector junctions. A circuit using such a device is shown in the right drawing. Heterojunctions can be used as collectors of the device. Improvement can be realized by inserting an intrinsic region between the base region and the collector regions. Coupling between the switch drive signal and the transmitted...