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Superconductive Memory Sense Plane

IP.com Disclosure Number: IPCOM000096687D
Original Publication Date: 1963-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Mahrous, H: AUTHOR

Abstract

A sense plane for superconductive memories is fabricated from a semiconductor material having nonlinear dielectric properties. Such a semiconductor material, when in a liquid helium ambient and within an electric field, generates a minority carrier current.

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Superconductive Memory Sense Plane

A sense plane for superconductive memories is fabricated from a semiconductor material having nonlinear dielectric properties. Such a semiconductor material, when in a liquid helium ambient and within an electric field, generates a minority carrier current.

Superconductive information storage plane 10 has conductor matrix 12 disposed over its surface, separated by insulation plane 14. Matrix 12 conveys read and write pulses. The write pulses control the state of plane 10. Semiconductive material 16 is adherent to the opposite surface of plane 10. The structure is within an ambient temperature induced by liquid helium. Sense conductors 18 contact material 6 and pass on to sense devices 20.

A bit of binary information is stored in a location of plane 10 by driving the location resistive. This is accomplished by passing current of a certain magnitude through the conductors of matrix 12 intersection over the location so as to develop a magnetic field capable of switching the location.

In order to sense whether a given location is in the resistive state, and determine its information content, currents, whose combined magnetic field is insufficient to switch a location resistive, are passed through the conductors of matrix 12 intersecting above the location to be interrogated. If that location is resistive, a flux linkage is established between the location and semiconductive material 16. Should the location have been superconductive,...