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Memory Element

IP.com Disclosure Number: IPCOM000096698D
Original Publication Date: 1963-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Peckels, P: AUTHOR

Abstract

The left drawing shows a memory cell of the type in which information is represented by the phase of an oscillation. The cell requires less power from an external source than usual cells.

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Memory Element

The left drawing shows a memory cell of the type in which information is represented by the phase of an oscillation. The cell requires less power from an external source than usual cells.

The cell consists of glass tube 1, which has deposited on it, a thin magnetic film. The easy direction of magnetization for the film is in the tangential direction and the hard direction of magnetization is in the longitudinal direction. The center drawing shows these directions of magnetization for the film which is represented as being detached from the glass tube.

The cell also has an oscillating circuit, shown by the heavy lines at the left. The oscillating circuit consists of capacitor 2 and coil 3 which is wound around tube 1. The oscillating circuit is tuned to frequency f.

The cell has a sustaining circuit 4. This is thin line circuit portion which includes a coil part which is wrapped around tube 1 and an axial part which passes through the tube. A sustaining current, the frequency of which can be a multiple or sub multiple of the tuning frequency of the oscillating circuit is applied to circuit 4 at point 5. If the sustaining current is of a frequency which is a sub multiple of the tuning frequency, it is necessary to superpose a direct current on the supply AC current.

If the sustaining current is passed through a winding which is oriented both in the direction of easy and hard magnetization of the magnetic film, the resulting magnetic field is in a dir...