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Obtaining Narrow Spacings Between Thin Film Conductors

IP.com Disclosure Number: IPCOM000096754D
Original Publication Date: 1963-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Seki, H: AUTHOR [+2]

Abstract

The method is for obtaining very fine spacings between thin film conductors, the latter being of the order of 1000 angstrom - 2000 angstrom thick. A strip of indium film I is deposited on glass substrate G coated with a thin film of silicon monoxide. A second film strip of gold A is deposited at right angles to strip I. Localized heating of the indium by the incident gold atoms causes some dissolving of the indium into the gold. As a result, there is a depletion d of the indium film adjacent to the borders of the overlying gold. Visual inspection of the crossing of the gold strip with the indium strip shows razorlike separations. The indium grains adjacent the gold film are absorbed by the gold very much like a blotter absorbs liquid droplets adjacent to it.

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Obtaining Narrow Spacings Between Thin Film Conductors

The method is for obtaining very fine spacings between thin film conductors, the latter being of the order of 1000 angstrom - 2000 angstrom thick. A strip of indium film I is deposited on glass substrate G coated with a thin film of silicon monoxide. A second film strip of gold A is deposited at right angles to strip I. Localized heating of the indium by the incident gold atoms causes some dissolving of the indium into the gold. As a result, there is a depletion d of the indium film adjacent to the borders of the overlying gold. Visual inspection of the crossing of the gold strip with the indium strip shows razorlike separations. The indium grains adjacent the gold film are absorbed by the gold very much like a blotter absorbs liquid droplets adjacent to it.

The obtaining of narrow depletion regions is not limited to the indium-gold combination. It applies as a general phenomenon for many combinations of superimposed metal films. This is provided the deposition of such thin films is made upon a substrate which is maintained at a temperature near the melting point of the underlying metal layer of the two deposited layers, and sufficient dissolution of the underlying metal layer takes place into the overlying layer. By way of example, copper deposited onto a tin film maintained at a temperature of about 100 degrees C. results in the formation of narrow depletion regions at the intersection of the copper and tin...