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Browse Prior Art Database

Light Coupled Transistor

IP.com Disclosure Number: IPCOM000096757D
Original Publication Date: 1963-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Dill, FH: AUTHOR

Abstract

The performance of light-coupled transistors is improved by making the light emitter of a mixture of Ga(As:P). This material gives an efficient light output of shorter wavelength than pure GaAs. This shorter wavelength is useful to excite carriers in a GaAs:Ga(AsP) junction. Ga(AsP) is vapor grown on GaAs. The structure is as illustrated in the drawing.

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Light Coupled Transistor

The performance of light-coupled transistors is improved by making the light emitter of a mixture of Ga(As:P). This material gives an efficient light output of shorter wavelength than pure GaAs. This shorter wavelength is useful to excite carriers in a GaAs:Ga(AsP) junction. Ga(AsP) is vapor grown on GaAs. The structure is as illustrated in the drawing.

The addition of only a few percent P to GaAs raises the energy gap sufficiently that the radiation generated has an energy greater than the energy gap of GaAs. This results in very high absorption in the GaAs and higher current gain than is obtainable from the all-GaAs photo-coupled transistors.

Other four-element devices of light-emitter photo-diode type and structures using a p-n-i-p structure receive benefit from the Ga(As:P) emitting diodes. Structures using a GaAs photodetector system benefit from Ga(As:P) light.

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