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Growing Single Crystal Epitaxial Films on Insulators

IP.com Disclosure Number: IPCOM000096782D
Original Publication Date: 1963-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Thomas, JE: AUTHOR

Abstract

A continuous single crystal epitaxial film is grown on a ceramic substrate so that lateral growth on it is favored over growth normal to the substrate. First, a wedge shaped silicon monoxide layer 10a is evaporated on a polycrystalline ceramic substrate 11 of a material such as aluminum oxide (A). Next, the layer 10a is oxidized to convert it to the silicon dioxide layer 10 (B).

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Growing Single Crystal Epitaxial Films on Insulators

A continuous single crystal epitaxial film is grown on a ceramic substrate so that lateral growth on it is favored over growth normal to the substrate. First, a wedge shaped silicon monoxide layer 10a is evaporated on a polycrystalline ceramic substrate 11 of a material such as aluminum oxide (A). Next, the layer 10a is oxidized to convert it to the silicon dioxide layer 10 (B).

Silicon dioxide is unfavorable for growth as compared with silicon. Accordingly, a small hole 12 (C) is made in layer 10 to expose a spot on substrate 11 which is favorable for nucleation. Then, a minute silicon chip 13 is secured to that spot such as by an underlying film of glass. There now exists on substrate 10 a single spot which is favorable for the nucleation of crystal growth.

When the assembly is placed for a period of time in a crystal growth chamber containing hydrogen and silicon tetrachloride, original layer 10 is removed by reactions occurring in the chamber. This removal begins at the thin portion of wedge shaped layer 10 about hole 12 and progresses to the thicker portion. The removal of the silicon dioxide enlarges hole 12 and gradually unpassivates the upper surface of substrate 11. Epitaxial growth about the nucleus or silicon chip 13 takes place so that after a period of time the growing silicon single crystal has the configuration in D. The final structure resembles that shown in E.

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