Browse Prior Art Database

Improved Film Memory Device

IP.com Disclosure Number: IPCOM000096795D
Original Publication Date: 1963-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Crawford, DJ: AUTHOR

Abstract

This is a flat film memory arrangement in which disturbances introduced into the ground plane are minimized.

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Improved Film Memory Device

This is a flat film memory arrangement in which disturbances introduced into the ground plane are minimized.

The small cross section flat film memory array employs a conductive ground plane 2. Thin ferromagnetic films 4, 6, 8 and 10 are deposited directly on plane 2 and form the bit storage areas for the memory. Disposed over the thin film bits are word lines 12 and 14 and bit lines 16 and 18. Each of the thin film bits is deposited on a raised portion of plane 2. The axes of the raised portions are parallel to the bit lines.

As shown in the lower drawing, when a bit line 16 is energized, an image conductor 20 is induced into plane 2. Image conductor 20 causes unwanted disturbing fields which affect adjacent bits unless it is contained. By grooving the areas between adjacent bit lines, the fields produced by image conductor 20 are largely confined to the land areas directly beneath the driven bits, thus resulting in reduction in plane 2 noise.

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