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Diffusion Procedure for Indium Phosphide Injection Lasers

IP.com Disclosure Number: IPCOM000096798D
Original Publication Date: 1963-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fern, RE: AUTHOR [+4]

Abstract

Indium phosphide injection lasers are made by diffusing zinc into Ntype material, thus producing diodes. These lase when sufficient current is passed through them in the forward direction. A convenient temperature range for diffusion of the zinc is between 700 degrees -900 degrees C.

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Diffusion Procedure for Indium Phosphide Injection Lasers

Indium phosphide injection lasers are made by diffusing zinc into Ntype material, thus producing diodes. These lase when sufficient current is passed through them in the forward direction. A convenient temperature range for diffusion of the zinc is between 700 degrees -900 degrees C.

At these temperatures, however, indium phosphide has an appreciable association pressure. Hence, it is necessary to maintain a pressure of phosphorus in the vial in order to prevent the decomposition of the material. This pressure of phosphorus is obtained by incorporating excess phosphorus along with the zinc. Such is when the tubes are sealed off prior to diffusion.

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