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Junction Delineation IN InP

IP.com Disclosure Number: IPCOM000096799D
Original Publication Date: 1963-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fern, RE: AUTHOR [+2]

Abstract

This electrolytic etching technique is for delineating the position of a p-n junction in indium phosphide. The technique involves revealing the junction by rendering the sample anodic and then dipping it into approximately 5% solution of HF in water.

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Junction Delineation IN InP

This electrolytic etching technique is for delineating the position of a p-n junction in indium phosphide. The technique involves revealing the junction by rendering the sample anodic and then dipping it into approximately 5% solution of HF in water.

The cathode should be inert to HF. For example, a carbon rod can be used for this purpose. A suitable current was found to be 5-10 milliamperes and a suitable etching time of the order of one second was used.

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