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Thin Film Metal-Semiconductor Pressure Transducer

IP.com Disclosure Number: IPCOM000096824D
Original Publication Date: 1963-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Krohl, RJ: AUTHOR [+3]

Abstract

Titanium dioxide thin film diodes of the type described on pages 4 through 8, Vol. 5, No. 11 of the IBM Technical Disclosure Bulletin for April 1963, are sensitive to varying pressures of the atmosphere, particularly to varying pressures of oxygen. The curves in A show reverse current to be a function of pressure varying from atmospheric pressure to 10/-5/ Torr.

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Thin Film Metal-Semiconductor Pressure Transducer

Titanium dioxide thin film diodes of the type described on pages 4 through 8, Vol. 5, No. 11 of the IBM Technical Disclosure Bulletin for April 1963, are sensitive to varying pressures of the atmosphere, particularly to varying pressures of oxygen. The curves in A show reverse current to be a function of pressure varying from atmospheric pressure to 10/-5/ Torr.

These diodes are also sensitive to oxygen pressures in excess of atmospheric pressure. Drawing B shows curves indicating the reverse current characteristics for atmospheric pressure and pressures of 30 p.s.i.

These diodes, because of their small size, can be used as pressure to electrical transducers in fluid logic technologies and also as oxygen and pressure indicators.

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