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Evaporating Silicon Monoxide On Substrates

IP.com Disclosure Number: IPCOM000096900D
Original Publication Date: 1962-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Kurtz, JA: AUTHOR

Abstract

In the evaporation of a film of silicon monoxide on a substrate, it is common practice to place bulk silicon monoxide in a cup 10 of sheet metal such as molybdenum and apply electrical energy to it. This heats the cup to a high temperature and volatilizes the silicon monoxide. As a result some of the latter escapes from the cup and is deposited as a film on the surface of the cool substrate. Unused silicon monoxide is discarded.

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Evaporating Silicon Monoxide On Substrates

In the evaporation of a film of silicon monoxide on a substrate, it is common practice to place bulk silicon monoxide in a cup 10 of sheet metal such as molybdenum and apply electrical energy to it. This heats the cup to a high temperature and volatilizes the silicon monoxide. As a result some of the latter escapes from the cup and is deposited as a film on the surface of the cool substrate. Unused silicon monoxide is discarded.

Instead of employing silicon monoxide as the source material in the cup 10, a mixture of fine quartz and powdered tantalum is used in a cup of material, such as tantalum, in proportions to produce either of the following reactions: 4SiO(2)+ 2 Ta--> 4SiO+ Ta(2)O(4)

5 SiO(2) + 2 Ta---> 5 SiO + Ta(2)O(5) The silicon dioxide is reduced to the monoxide and either tantalum tetraoxide or the pentoxide is formed.

This procedure produces pinhole tree silicon monoxide films on a substrate. The raw materials employed are considerably cheaper than bulk silicon monoxide and are used with very little waste.

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