Browse Prior Art Database

Epitaxial Growth of Gallium Arsenide

IP.com Disclosure Number: IPCOM000096988D
Original Publication Date: 1962-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Kamath, GS: AUTHOR

Abstract

A PN junction of gallium arsenide (GaAs) is fabricated using Group VI B elements both as the transporting agent and dopant in the epitaxial growth of GaAs.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 92% of the total text.

Page 1 of 2

Epitaxial Growth of Gallium Arsenide

A PN junction of gallium arsenide (GaAs) is fabricated using Group VI B elements both as the transporting agent and dopant in the epitaxial growth of GaAs.

A P-type GaAs wafer 1 of desired resistivity, crystallographic orientation and size, serves as the substrate. Wafer 1 is placed on the bottom of quartz tube 2. A small portion 3 of a pure Group VI B element, such as sulfur, selenium or telurium is also placed in tube 2. There is positioned in the head of tube 2 another piece 4 of GaAs. Tube 2 is evacuated, sealed off and heated in its vertical position at a temperature which promotes epitaxial growth of N-type GaAs on wafer 1. The thickness of the deposited layer varies proportionally with the time tube 2 remains heated at the appropriate temperature. The transport with selenium is easy and rapid at temperatures above 800 degrees C. Telurium requires higher operating temperatures and provides lower rates of transport.

In the process, GaAs is transported from a high temperature source 4 to the substrate I which is at a lower temperature. At the higher temperature, GaAs is decomposed in the presence of, e.g., selenium (Se). The free Ga combines with the Se to give selenides GaSe and Ga(2)Se(3). These compounds subsequently decompose at the lower temperature near the substrate to yield Ga. This combines with As to give GaAs which, in turn, is deposited epitaxially on substrate 1. The deposited GaAs layer retains in it a portio...