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Technique for Heat-Sinking to Lower K

IP.com Disclosure Number: IPCOM000096989D
Original Publication Date: 1962-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Bowers, RW: AUTHOR [+2]

Abstract

The K factor of a semiconductive device is reduced by improving the thermal conductivity of the solder film which bonds the collector of the device to a heat sink. The solder film thickness and voids within the film are two of the largest thermal resistances on a case connected unit.

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Technique for Heat-Sinking to Lower K

The K factor of a semiconductive device is reduced by improving the thermal conductivity of the solder film which bonds the collector of the device to a heat sink. The solder film thickness and voids within the film are two of the largest thermal resistances on a case connected unit.

Reduction of the thickness of the solder film and voids is accomplished by providing a .010 to .015 inch diameter vent hole 1 through the center of heat sink plug 2. Plug 2 is forced against the solder dot of collector 3. The excess solder flows upward through hole 1, reducing the thickness of solder film 4. Further, hole 1 reduces voids in film 4 by permitting the ready passage of gases formed during the soldering operation from the solder film.

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