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Fast Switching Diode

IP.com Disclosure Number: IPCOM000097110D
Original Publication Date: 1962-May-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Anderson, RL: AUTHOR

Abstract

The fast switching diode comprises two regions 1 and 2 of opposite conductivity type joined at a PN junction. One of the regions has a lower resistivity than the other. The region of higher resistivity is arranged to have a portion adjacent the carrier or depletion region. Here, the concentration of impurity decreases away from the junction. When the device is reversely biassed, a drift field is established in this portion. This field acts to move injected carriers away from the junction giving a fast switching line.

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Fast Switching Diode

The fast switching diode comprises two regions 1 and 2 of opposite conductivity type joined at a PN junction. One of the regions has a lower resistivity than the other. The region of higher resistivity is arranged to have a portion adjacent the carrier or depletion region. Here, the concentration of impurity decreases away from the junction. When the device is reversely biassed, a drift field is established in this portion. This field acts to move injected carriers away from the junction giving a fast switching line.

The diode is formed by epitaxial deposition. Materials of opposite conductivity type are deposited successively on a base. During initial deposition of the second material, additional carriers of the opposite conductivity are also deposited. The concentration of these additional carriers initially increases and then decreases to zero to form the aforesaid portion.

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