Browse Prior Art Database

Magnetic Memory

IP.com Disclosure Number: IPCOM000097117D
Original Publication Date: 1962-May-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Shahan, VT: AUTHOR

Abstract

The word-organized, magnetic thin-film memory employs a plurality of storage cells, each comprising a pair of elements A and B. Adjacent thin film elements A and B have their easy axes of magnetization epsilon in substantial alignment. They are positioned in stray-field coupling relationship with one another. Word pulses applied to word lines W are of sufficient energy to effect magnetization alignment of the associated elements A in the respective easy direction 0 or 1. Bit pulses applied to bit lines X are adjusted such that the associated elements B are switched into the respective easy direction 0 or 1. This occurs only in case the bit driving field and the stray field of the neighboring A elements are properly superimposed in the same direction.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 63% of the total text.

Page 1 of 2

Magnetic Memory

The word-organized, magnetic thin-film memory employs a plurality of storage cells, each comprising a pair of elements A and B. Adjacent thin film elements A and B have their easy axes of magnetization epsilon in substantial alignment. They are positioned in stray-field coupling relationship with one another. Word pulses applied to word lines W are of sufficient energy to effect magnetization alignment of the associated elements A in the respective easy direction 0 or 1. Bit pulses applied to bit lines X are adjusted such that the associated elements B are switched into the respective easy direction 0 or 1. This occurs only in case the bit driving field and the stray field of the neighboring A elements are properly superimposed in the same direction.

In the first step of a write-in cycle, a negative pulse is applied to a selected word line W causing the A elements of the respective column to switch into state
0. The adjacent B elements of the same column are now magnetically biased toward state 0 by stray field coupling from the A elements. In the second cycle, these B elements are switched into state 0 by bit pulses applied to all diagonally running bit lines X. Magnetically unbiased B elements are not affected by such bit pulses and, therefore, remain in their previous state. In the third step, a positive pulse is applied to the same selected word line W which switches the associated A elements into state 1. Then, the adjacent B elements are mag...