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Anodization of Semiconductor Surfaces to Form Chemically Bound Alkyl Groups

IP.com Disclosure Number: IPCOM000097130D
Original Publication Date: 1962-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pliskin, WA: AUTHOR [+2]

Abstract

Silicon dioxide films, which are useful for surface passivation purposes and contain chemically bound CH(3) groups, are formed on silicon substrates by chemical anodization in methyl alcohol. These films are clearly visible to the naked eye and have thicknesses which may vary from a few hundred to a few thousand Angstroms.

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Anodization of Semiconductor Surfaces to Form Chemically Bound Alkyl Groups

Silicon dioxide films, which are useful for surface passivation purposes and contain chemically bound CH(3) groups, are formed on silicon substrates by chemical anodization in methyl alcohol. These films are clearly visible to the naked eye and have thicknesses which may vary from a few hundred to a few thousand Angstroms.

Examination by infra-red spectroscopy shows the presence of an oxide layer with chemically bound CH(3) or methyl groups in the form of Si-O-CH(3). The C- H stretching absorption bands in the infra-red spectrum are at 2850 and 2960 cm/-1/. The chemically bound groups are not removed from the substrates by heating in air for one hour at 170 degrees C and, hence, are considered to be stable. No visible films are formed when anodization is tried in ethyl alcohol or normal butyl alcohol.

As an example, anodization in methyl alcohol at 200 volts with an anodizing current varying from 0.5 to 0.4 ma. per sq. cm. for 1/2 hour produces an anodized oxide film 2000 Angstroms thick.

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