Browse Prior Art Database

Write-Only Core Memory

IP.com Disclosure Number: IPCOM000097167D
Original Publication Date: 1962-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Foglia, HR: AUTHOR [+2]

Abstract

This magnetic memory accepts information at a fast rate by employing a walking technique for the cores when writing. This information can be read from the same address only after a delay. Any address other than the one just written is accessed rapidly.

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Write-Only Core Memory

This magnetic memory accepts information at a fast rate by employing a walking technique for the cores when writing. This information can be read from the same address only after a delay. Any address other than the one just written is accessed rapidly.

The memory is organized into word columns and bit rows of bistable magnetic cores 10 coupled by respective word lines 12 and bit drive lines 14. To store information into a single word, a read pulse is applied to a selected word line 12 to establish each core of the selected column in a saturation remanence state -Br, a binary 0. Each bit drive line is energized by a sequence of it pulses which occur at regular time intervals. Each pulse applies a bit drive field. This tends to switch each core toward an opposite saturation remanence state +Br. The read pulse applied to a selected word column is timed to occur immediately before a first of the bit drive fields.

Information is then stored in the selected word column by applying half-select drive field to each core 10 of the selected word. This is at a time normally occurring after termination of the first bit drive field. In those bit positions in which a binary 1 is to be stored, the first bit drive field is controlled to extend beyond its normal termination time and be coincident with the selection field applied to each core of the selected word column.

Those cores coincidently energized are switched from -Br to an intermediate remanence sta...