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Tunnel Diode Memory Sense Amplifier

IP.com Disclosure Number: IPCOM000097194D
Original Publication Date: 1962-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Gersbach, JE: AUTHOR [+3]

Abstract

Detection of a change of state in a bistable storage device employed in a memory matrix is accomplished by a sense amplifier utilizing three tunnel diode s.

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Tunnel Diode Memory Sense Amplifier

Detection of a change of state in a bistable storage device employed in a memory matrix is accomplished by a sense amplifier utilizing three tunnel diode
s.

Tunnel diodes M1, M2... MN are the storage devices along one bit line of a memory. These are biased from a voltage supply +V and connect to a bit driver. Each diode along the line is coupled to an independent word driver. The sense amplifier has a discriminating portion including tunnel diode D1 and resistors R1, R2 and R3 and a latch including tunnel diodes D3 and D4 and resistor R4. The two portions are coupled by resistor R5. The discriminating portion couples through capacitor C to the bit line. Each portion receives a conditioning signal at terminals A and B, respectively. These signals are, respectively, a strobe signal and a latch strobe signal.

Diode D2 is a silicon diode and is employed to clamp the strobe signal at A to establish a well-defined threshold for D1. This threshold is adjusted by variable load resistance R2.

The discriminating portion of the circuit and, specifically, D1 are conditioned by the strobe before an input signal is detected by the sense amplifier. Thereafter, when one of the diodes M1... MN has a word driver pulse applied to it, a voltage V1 is provided at point E. If a change of state takes place in one of the memory diodes, a sharp transition, a 1 occurs at E. If there is no change of state in a diode of the memory, a slight transition (a...