Browse Prior Art Database

AU-Bonded Diode Manufacturing Technique

IP.com Disclosure Number: IPCOM000097219D
Original Publication Date: 1962-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dunkel, WE: AUTHOR

Abstract

To avoid brittleness of the gold-germanium alloy in Au-bonded diodes during the forming and annealing cycle of the manufacturing process, the contact resistance is measured by a pulse prior to the forming pulse. This measurement is used for the adjustment of either the height or width or both of the junction forming pulse. The purpose is to maintain a constant I/2/Rt product or constant power during forming of the junction.

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AU-Bonded Diode Manufacturing Technique

To avoid brittleness of the gold-germanium alloy in Au-bonded diodes during the forming and annealing cycle of the manufacturing process, the contact resistance is measured by a pulse prior to the forming pulse. This measurement is used for the adjustment of either the height or width or both of the junction forming pulse. The purpose is to maintain a constant I/2/Rt product or constant power during forming of the junction.

The forward voltage drop obtained after forming the junction is measured during the first annealing pulse. The following pulses are adjusted to obtain uniform power (I/2/Rt) during annealing. Such causes uniform temperature decay for each diode.

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