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Preparation Of Metal Dielectric Mixtures For Microminiaturzed Circuitry

IP.com Disclosure Number: IPCOM000097247D
Original Publication Date: 1962-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

White, F: AUTHOR [+2]

Abstract

The photolytic method forms a metal dielectric deposit for use as a resistive element in microminiaturized circuits.

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Preparation Of Metal Dielectric Mixtures For Microminiaturzed Circuitry

The photolytic method forms a metal dielectric deposit for use as a resistive element in microminiaturized circuits.

A substrate 1 on which a photolytic process is to be effected is positioned in a gaseous conduit system 3. An inert gas, e. g., argon, helium, etc., flows continuously from left to right in conduit 3. Two or more organic vapors, each capable of being absorbed on substrate 1, are introduced via stopcocks 5 and 7 along input conduits 9 and 11, respectively, and mixed with the inert gas. One such organic vapor can be a metal alkyl compound, e.g., tetramethyl lead, and another organic vapor can be a dielectric material, e.g., butadiene. When the mixture of organic vapors and inert gas passes over the surface of substrate 1, the organic vapors form a composite absorbed layer on it having a composition determined by the ratio of organic vapors in the gas phase. When the composite layer is irradiated by light of predetermined wavelengths directed from light source 13 and defined in a selected pattern by mask 15, selected portions of the composite layer are photolytically activated. The metal alkyl compound is decomposed and the dielectric material is polymerized. The pattern formed on substrate 1 consists essentially of a mixture of the metal, e.g., lead and the polymerized dielectric material. Unreacted portions of the composite layer are removed by desorption in the inert gas when s...