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Distributed Bridge-T Transducer

IP.com Disclosure Number: IPCOM000097274D
Original Publication Date: 1962-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Cedarholm, JP: AUTHOR [+3]

Abstract

Transducer devices for effecting a representation of temperature, pressure, and other phenomena are provided. Any transducer is here a semiconductor equivalent of a distributed bridge T network, one of the elements of which is a material sensitive to the phenomena being measured.

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Distributed Bridge-T Transducer

Transducer devices for effecting a representation of temperature, pressure, and other phenomena are provided. Any transducer is here a semiconductor equivalent of a distributed bridge T network, one of the elements of which is a material sensitive to the phenomena being measured.

The distributed bridge T transducer shown is for the detection of temperature. The dielectric layer 1 is a BaTiO(3) ceramic having a dielectric constant which varies with temperature. When used to replace the twin T network in a twin T oscillator, the device sustains a frequency that shifts in response to changes in ambient temperature.

It is also possible to construct a temperature transducer in which the sensitive element is the resistive layer 2. In this case, the resistive layer is of silicon carbide which exhibits temperature sensitivity.

The effects of pressure, light, humidity, radiation or other phenomena on the resistivity of semiconductors can be represented by a frequency signal by incorporation of suitable materials.

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