Browse Prior Art Database

Cryotron Gating Element

IP.com Disclosure Number: IPCOM000097295D
Original Publication Date: 1962-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Ames, I: AUTHOR [+3]

Abstract

The reproducibility of the gating element of an in line cryotron is increased by depositing the gating element in two sections. First, the center section A is deposited and then two gate limit sections B and C are deposited.

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Cryotron Gating Element

The reproducibility of the gating element of an in line cryotron is increased by depositing the gating element in two sections. First, the center section A is deposited and then two gate limit sections B and C are deposited.

The control elements for the cryotron extend beyond the gate limit sections B and C as shown by the element D which is indicated in phantom. The effective portion of the gating element is the section of the gating element located between gate limit sections B and C.

Sections A, B and C are made of a soft superconducting material such as indium. Control D is made of a hard superconducting material such as lead.

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