Browse Prior Art Database

Composite Semiconducting Elements

IP.com Disclosure Number: IPCOM000097302D
Original Publication Date: 1962-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Poupon, Y: AUTHOR

Abstract

This process provides an integrated circuit in a semiconductor substrate. The single semiconductor assembly has a transistor portion and other portions that provide a rectifying function. The transistor and other portions are interconnected by metalized circuitry.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 57% of the total text.

Page 1 of 2

Composite Semiconducting Elements

This process provides an integrated circuit in a semiconductor substrate. The single semiconductor assembly has a transistor portion and other portions that provide a rectifying function. The transistor and other portions are interconnected by metalized circuitry.

Crystal 20 of a preselected conductivity and high resistivity receives a first diffusion 22 to establish high resistivity section 21 and low resistivity section 23. Section 23 is adapted to the manufacture of transistors and diodes. Section 21 incorporates a load resistance in such elements. A second diffusion is performed on section 23 to establish a third section 25 having a first PN junction 24. This diffusion can be realized by either localized diffusion, as in planar structure, or by simultaneous diffusion, as in mesa type manufacture. An impurity 26 is diffused or alloyed into one surface of the crystal to establish a second PN junction 28. The sections 23, 25 and 26 form the collector, base and emitter electrodes of a transistor. Metal contact 30 is secured to the second diffused area as a base contact. Grooves 32 are placed in the crystal and deepened (34) to separate the individual transistors, when the diffusion is by mesa type manufacture. In the case of planar structure manufacture, grooves 32 or separating zones are obtained directly.

Grooves 32 must be spaced a predetermined distance apart due to crystal technologic reasons. To make full use of PN junction...