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Portraying PN Junctions In Gallium Arsenide

IP.com Disclosure Number: IPCOM000097321D
Original Publication Date: 1962-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Yeh, TH: AUTHOR

Abstract

A PN junction in gallium arsenide can be portrayed by staining the semiconductor in a 10% solution of nitric acid. The solution imparts a darker stain to the P-type region than it does to the N-type region, and thus delineates the junction. It is believed that hydrogen ions in the nitric acid are selectively liberated, more of them appearing at the P-type region of the gallium arsenide. Oxidation of the latter takes place and a visible insoluble transparent film is created primarily on the P-type region.

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Portraying PN Junctions In Gallium Arsenide

A PN junction in gallium arsenide can be portrayed by staining the semiconductor in a 10% solution of nitric acid. The solution imparts a darker stain to the P-type region than it does to the N-type region, and thus delineates the junction. It is believed that hydrogen ions in the nitric acid are selectively liberated, more of them appearing at the P-type region of the gallium arsenide. Oxidation of the latter takes place and a visible insoluble transparent film is created primarily on the P-type region.

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