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Sputtered Tantalum

IP.com Disclosure Number: IPCOM000097334D
Original Publication Date: 1962-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Maissel, LI: AUTHOR [+2]

Abstract

Small traces of impurity gases are utilized in the sputtering of tantalum to improve the rate of deposition of conductive material. The improvement is achieved by injecting a burst of impurity gas into the dynamic system at the start of sputtering run for tantalum.

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Sputtered Tantalum

Small traces of impurity gases are utilized in the sputtering of tantalum to improve the rate of deposition of conductive material. The improvement is achieved by injecting a burst of impurity gas into the dynamic system at the start of sputtering run for tantalum.

Impurity gases effective in this procedure include: hydrogen, nitrogen, and forming gas. The optimum amount required is extremely small and is of the order of 200 parts per million.

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