Browse Prior Art Database

Thin Film Magnetic Memory Device

IP.com Disclosure Number: IPCOM000097346D
Original Publication Date: 1962-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Bertelsen, BI: AUTHOR

Abstract

Multilayer thin film elements are constructed with a sandwich structure of two continuous sheets of magnetic film to provide a closed flux path.

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Thin Film Magnetic Memory Device

Multilayer thin film elements are constructed with a sandwich structure of two continuous sheets of magnetic film to provide a closed flux path.

Between magnetic films 10 and 12 forming the sandwich structure is a masked conductive layer 14, disposed as a parallel line array to provide bit drive lines. Surrounding the outer surface of the masked conductive array 14 are SiO layers 16 and 18 which are coated on the opposing surfaces of the magnetic films 10 and 12.

Superimposed over the outer surfaces of the magnetic films 10 and 12 are SiO layers 20 and 22, SiO layer 20 being, in turn, superimposed over conductive substrate 24. Over SiO layer 22 is a second masked layer of conductive material 26 disposed orthogonally in an array of parallel lines with respect to the bit drive lines for use as word drive lines.

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