Browse Prior Art Database

Control Grid Structure For Analogue Devices Using Cermet Grains

IP.com Disclosure Number: IPCOM000097362D
Original Publication Date: 1962-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Thun, RE: AUTHOR [+2]

Abstract

This process produces a control grid for thin film analogue-type solid state devices. A collector electrode 1 is deposited on a substrate upon which a dielectric 2 is deposited. The control grid 3 is of the order of 100 angstroms or less in thickness. Grid 3 is deposited by vapor deposition techniques onto dielectric 2. Such is a simultaneous deposition of a metal and a dielectric material such as silicon monoxide.

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Control Grid Structure For Analogue Devices Using Cermet Grains

This process produces a control grid for thin film analogue-type solid state devices. A collector electrode 1 is deposited on a substrate upon which a dielectric 2 is deposited. The control grid 3 is of the order of 100 angstroms or less in thickness. Grid 3 is deposited by vapor deposition techniques onto dielectric 2. Such is a simultaneous deposition of a metal and a dielectric material such as silicon monoxide.

The deposited metallic grains are distributed with the silicon monoxide so as to produce electric continuity from metal grain to metal grain. Another dielectric 4 is vacuum deposited upon control grid 3. The emitter electrode 5 is deposited upon dielectric 4, to complete a thin film triode.

By making the control grid 3 of a cermet, an intimately molecular dispersion of a metal and a dielectric, material, the following is obtained: (a) a control grid structure which has a minimum of carrier injection from the metal in the grid; (b) an electric tunnelling through the dielectric of the control grid; and (c) a grid that is compatible with the dielectric layers 2 and 4 adjoining, respectively, the emitter and collector regions.

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