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The Use of Free Radicals for Mask Cleaning

IP.com Disclosure Number: IPCOM000097380D
Original Publication Date: 1962-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Gendron, MF: AUTHOR [+2]

Abstract

The method is for cleaning evaporation deposits formed on a pattern mask.

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The Use of Free Radicals for Mask Cleaning

The method is for cleaning evaporation deposits formed on a pattern mask.

During an evaporation/deposition process, evaporation deposits 1 and 3 form in superimposed fashion on pattern mask 5. To remove deposits 1 and 3, streams of chemically reactive species, indicated by arrow 7, are directed in turn over mask 1 and form volatile chemical compounds with deposits 3 and 1, respectively, Each of the species is not chemically reactive with the mask material. For example, a deposit of lead is removed as follows: Pb + 4CH(3) -aPb(CH(3))(4) :AB Deposits 1 and 3 are removed completely even from regions inaccessible to ordinary cleaning methods without structural damage, e.g., bending, or chemical attack of mask 5.

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