Browse Prior Art Database

Mask Cleaning by Temperature Cycling

IP.com Disclosure Number: IPCOM000097381D
Original Publication Date: 1962-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Gendron, MF: AUTHOR [+2]

Abstract

These two methods remove evaporant deposits from pattern masks employed in evaporation/deposition processes.

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Mask Cleaning by Temperature Cycling

These two methods remove evaporant deposits from pattern masks employed in evaporation/deposition processes.

Metallic mask 1 is precoated with a thin layer of highly stressed material 3, e.g., SiO, over which thin layers of evaporants 5 and 7 form during the evaporation/deposition process. The materials forming mask 1 and layer 3, respectively, have sufficiently different coefficients of thermal expansion. When mask 1 is temperature cycled, e. g., to liquid nitrogen temperatures subsequent to the evaporation/deposition processes, resultant stresses build up in layer 3 which cause it to rupture and peel, thus removing with it evaporant layers 5 and 7 from mask 1.

Alternately, layer 3 of SiO can be deposited at a grazing incidence greater than 30 degrees so as to be highly unstable and rupture when exposed to water vapor. However, layer 3 is sufficiently stable when maintained in vacuum. Subsequent to the evaporation/deposition process, mask 1 is immersed in water rather than in a chemical solution so as to cause layer 3 to rupture and peel from the mask.

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