Browse Prior Art Database

Thin Film Memory

IP.com Disclosure Number: IPCOM000097382D
Original Publication Date: 1962-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Young, WH: AUTHOR

Abstract

This process produces a flat film memory in which alternating layers of insulation and copper foil are sequentially laminated in the construction.

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Thin Film Memory

This process produces a flat film memory in which alternating layers of insulation and copper foil are sequentially laminated in the construction.

To form the memory, the bit, word, and sense line patterns are etched into the laminated copper foil. First the bit line pattern is etched into a thick copper clad laminate. Over the bit lines, a sheet of copper is laminated and a word line pattern etched into it. Over the word line pattern, a sheet of copper is laminated and the sense line pattern etched.

A sheet of insulating material is laminated over the sense lines and the insulating material clad with the desired magnetic material. After the required bit pattern is etched into the magnetic material, the construction is completed with the depositing of a ground plane over the magnetic bit pattern. see diagram

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