Browse Prior Art Database

Bulk Memory Storage

IP.com Disclosure Number: IPCOM000097419D
Original Publication Date: 1962-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Anderson, JL: AUTHOR [+4]

Abstract

In this device, information is stored on a magnetic film transmission line by temporarily altering the magnetic characteristics through the action of a beam of energy.

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Bulk Memory Storage

In this device, information is stored on a magnetic film transmission line by temporarily altering the magnetic characteristics through the action of a beam of energy.

The information is stored by focusing an energy beam at a spot or spots on the surface of the film. The film is heated and the coercive force reduced below a selected value at this spot or spots. By passing a pulse of a selected polarity through the film, the film is switched to a desired remnant state at the selected spot (spots).

To sense the information stored in this fashion, the energy beam is focused at a data spot and then a pulse sent through the film. The spot switches and induces a reflection on the film which travels back toward the input and is sensed.

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