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Multijunction Photocell

IP.com Disclosure Number: IPCOM000097429D
Original Publication Date: 1962-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hunter, LP: AUTHOR

Abstract

A photoconducting device having a high figure of merit and a high dark resistance is fabricated by sintering a mixture of particles of both P and N type doping of high-mobility semiconductor material such as germanium. Silicon and gallium arsenide are also useful. The P and N type semiconductor material is ground into particles which are then mixed so as to obtain a uniform distribution. Then the particles are heated.

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Multijunction Photocell

A photoconducting device having a high figure of merit and a high dark resistance is fabricated by sintering a mixture of particles of both P and N type doping of high-mobility semiconductor material such as germanium. Silicon and gallium arsenide are also useful. The P and N type semiconductor material is ground into particles which are then mixed so as to obtain a uniform distribution. Then the particles are heated.

Because of impurities at the surfaces of the particles, the surfaces melt before the purer bulk material melts. This operation forms, between the contiguous particles, a network of PN junctions having a high dark resistance. The network of floating P and N regions serves as traps for photoelectrons and holes so that good quantum efficiency is realized. For some applications, it is desirable to etch the sintered material lightly to assure low dark currents and high stand-off voltages.

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