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Esaki Diodes Using Boron Doped Germanium

IP.com Disclosure Number: IPCOM000097514D
Original Publication Date: 1961-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

Boron is a satisfactory dopant and enters Germanium in a concentration sufficient to form quantum mechanical tunneling or Esaki junctions.

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Esaki Diodes Using Boron Doped Germanium

Boron is a satisfactory dopant and enters Germanium in a concentration sufficient to form quantum mechanical tunneling or Esaki junctions.

Esaki junctions are fabricated by alloying Sn:Pb dots containing 3% or 5% As into melt-grown Ge doped with B (concentration, ~ 2 X 10/19/ (cm/3/)). In general, the peak current approximately doubles and the valley current approximately halves upon cooling to 77 degrees K or lower. The magnitude and direction of the changes suggest that a considerable change occurs in the actual tunneling mechanism itself. These changes would be different from the changes of much smaller magnitude sometimes observed with other dopants.

The drawing shows the characteristics of a unit which exemplifies the temperature dependence described.

The drawing shows the characteristics of an Esaki junction formed by alloying an Sn:Pb + 5% As dot on Boron-doped Ge. The junction area is ~ 8 X 10/- 5/cm/2/; current density ~ 1.25 A/cm/2/.

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