Browse Prior Art Database

Memory Device

IP.com Disclosure Number: IPCOM000097527D
Original Publication Date: 1961-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Shortle, JK: AUTHOR

Abstract

The trend toward higher speeds in information storage systems necessitates the use of memory devices having faster flux switching capabilities. While switching speeds of conventional ferrite memory cores are increased by reduction in size, a practical limit of miniaturization exists. With the memory device shown, extremely fast switching speeds are achieved without the difficulties inherent in miniaturization.

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Memory Device

The trend toward higher speeds in information storage systems necessitates the use of memory devices having faster flux switching capabilities. While switching speeds of conventional ferrite memory cores are increased by reduction in size, a practical limit of miniaturization exists. With the memory device shown, extremely fast switching speeds are achieved without the difficulties inherent in miniaturization.

The device is a toroidal body, the major portion of which consists of a low reluctance material, such as iron. A segment of high reluctance material, for example, a square loop ferrite, completes the flux path. When a magnetomotive force is applied to the body, the field intensity in the ferrite section is higher than that which would be created by the same force in a toroid consisting wholly of ferrite material. Thus, a given quantity of flux is switched in a significantly shorter time.

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