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Temperature Compensation Of Silicon Solar Cells

IP.com Disclosure Number: IPCOM000097611D
Original Publication Date: 1961-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Athens, AS: AUTHOR

Abstract

A diode having a temperature characteristic reasonably close to that of the solar cell and poled to complement the leakage current from it is connected to the same base electrode junction point a. Then, as the environmental temperature of the cell and diode increases, the diode current offsets the leakage current of the solar cell. This keeps the current on the base electrode substantially constant.

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Temperature Compensation Of Silicon Solar Cells

A diode having a temperature characteristic reasonably close to that of the solar cell and poled to complement the leakage current from it is connected to the same base electrode junction point a. Then, as the environmental temperature of the cell and diode increases, the diode current offsets the leakage current of the solar cell. This keeps the current on the base electrode substantially constant.

The diode also functions as a clamp to prevent the negative voltage across the solar cell from exceeding 1 volt whenever the transistor is removed from the circuit. The diode is back-biased out of the circuit during the light on condition so as not to load the circuit.

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