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Growing Highly Doped Semiconductor Crystals

IP.com Disclosure Number: IPCOM000097616D
Original Publication Date: 1961-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Chamberlin, EF: AUTHOR [+3]

Abstract

A highly doped semiconductor crystal is grown by zone levelling a semiconductor ingot 10 of a material such as germanium in a dynamic atmosphere of forming gas. The ingot is pulled by devices (not shown) in the direction indicated through a stream of forming gas flowing through a furnace 11. The molten zone 12 of the ingot is heated by a radio-frequency coil 13.

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Growing Highly Doped Semiconductor Crystals

A highly doped semiconductor crystal is grown by zone levelling a semiconductor ingot 10 of a material such as germanium in a dynamic atmosphere of forming gas. The ingot is pulled by devices (not shown) in the direction indicated through a stream of forming gas flowing through a furnace 11. The molten zone 12 of the ingot is heated by a radio-frequency coil 13.

An impurity source 14 is maintained upstream in the gas flow. This is heated by 15 to a temperature which is sufficient to effect thermal decomposition of the doping impurity. Thus, a vapor pressure of the impurity is maintained over the molten zone 12 of the ingot 10. This vapor pressure keeps a constant concentration of the impurity in the molten zone. By controlling the temperature of the impurity source 14, the magnitude of the impurity concentration in the molten zone 12 and, hence, in the crystal is controlled and reproduced.

This technique assures a uniform concentration of the impurity in the crystal, is reproducible, and is simpler and faster than techniques which employ a sealed capsule for containing the impurity source and the ingot.

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