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Non-destructive Readout For Thin Film Memory

IP.com Disclosure Number: IPCOM000097617D
Original Publication Date: 1961-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Coughlin, JJ: AUTHOR [+2]

Abstract

Local amplification of Hall effect nondestructive readout of a ferromagnetic thin film memory cell is provided by depositing a transistor on the cell and utilizing a Hall element as the emitter of the transistor. Thus, the direction of magnetic flux through the emitter controls the polarity of the Hall voltage so as to add to or subtract from the emitter base bias of the transistor. By means of the local amplification, the signal to noise ratio on the output lines is raised.

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Non-destructive Readout For Thin Film Memory

Local amplification of Hall effect nondestructive readout of a ferromagnetic thin film memory cell is provided by depositing a transistor on the cell and utilizing a Hall element as the emitter of the transistor. Thus, the direction of magnetic flux through the emitter controls the polarity of the Hall voltage so as to add to or subtract from the emitter base bias of the transistor. By means of the local amplification, the signal to noise ratio on the output lines is raised.

The thin film memory bit I is suitably insulated, such as by a layer of silicon monoxide, and over this there is deposited a Hall element 2. This serves as the emitter of the transistor and has an energizing current line- 3 and an emitter terminal line 4. The combination Hall element and emitter is located in the field 5 of one of the poles of the memory bit.

Adjacent to the element 2 is located the base 6 of the transistor having a base terminal line 7. Adjacent to this is located the collector 8 having a terminal line 9. Suitable bias and power supplies are provided at the terminals 10 and 11. A load RL is interposed in the collector circuit locally or remotely from the memory cell.

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