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Restraint Domain Nucleation In Thin Magnetic Films

IP.com Disclosure Number: IPCOM000097639D
Original Publication Date: 1961-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Methfessel, S: AUTHOR [+2]

Abstract

A problem associated with a magnetic thin film storage element is stray field coupling emanating from its edges. This causes nucleation and the element exhibits an unpredictable switching behavior.

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Restraint Domain Nucleation In Thin Magnetic Films

A problem associated with a magnetic thin film storage element is stray field coupling emanating from its edges. This causes nucleation and the element exhibits an unpredictable switching behavior.

A magnetic thin film storage element 10 having an easy direction of magnetization 12 has three essential zones 14, 16 and 18. The inner or operating zone 14 of 10 is made very homogeneous to avoid internal domain nucleation. The outer or external part 18 is provided for the closure of magnetic flux in which stray fields always cause appearance of domains 20 exhibiting inverted magnetization with respect to the magnetization of zone 14. Zone 16 is made to exhibit a coercive force for wall motion which is higher than the external zone 18 and higher than the operating zone 14.

Thus, the ring shaped barrier zone 16 provides a film with restraint domain nucleation in which stray field coupling emanating from its edges cannot cause nucleation in the operating zone 14. Element 10, therefore, exhibits a controllable and predetermined switching behavior.

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