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Laminar Cryotronic Structures

IP.com Disclosure Number: IPCOM000097695D
Original Publication Date: 1961-Apr-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Stierhoff, GC: AUTHOR

Abstract

The drawing shows a laminar thin film cryotronic structure comprised of alternate layers of normal and superconductive materials. It exhibits relatively high values of critical temperature, critical magnetic field, and critical current.

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Laminar Cryotronic Structures

The drawing shows a laminar thin film cryotronic structure comprised of alternate layers of normal and superconductive materials. It exhibits relatively high values of critical temperature, critical magnetic field, and critical current.

The structure employs the principle that negative surface energies are present at normal superconducting interfaces which provide for the survival of superconductivity in the presence of relatively strong magnetic fields. The principle use is as ground planes for cryotronic circuits.

The normal layers are about 50 Angstrom units in thickness. The superconducting layers have a thickness of about ten times the penetration depth of magnetic fields into the material. The number of layers are sufficient to form the total desired gate thickness. Typical materials are bismuth and copper for the normal layers and lead and niobium for the superconductive layers.

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