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Browse Prior Art Database

Preparation of Films of III-V Compounds

IP.com Disclosure Number: IPCOM000097757D
Original Publication Date: 1961-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Harrison, BC: AUTHOR [+2]

Abstract

The method of forming semiconductors comprises mixing the vapors of an alkyl, halogen, or hydrogen compound including elements in the III-A column of the Periodic Table (for example, Al, Ga, In) with the vapors of an alkyl, halogen, or hydrogen compound of an element from the V-A column of the periodic table (P, As, Sb). These vapors are reacted at a heated substrate which is to be coated with the III-V semiconductor.

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Preparation of Films of III-V Compounds

The method of forming semiconductors comprises mixing the vapors of an alkyl, halogen, or hydrogen compound including elements in the III-A column of the Periodic Table (for example, Al, Ga, In) with the vapors of an alkyl, halogen, or hydrogen compound of an element from the V-A column of the periodic table (P, As, Sb). These vapors are reacted at a heated substrate which is to be coated with the III-V semiconductor.

For example, to make a GaAs film the substrate is heated at 150 degrees to 300 degrees C in a vapor mixture of Ga(CH(3))(3) and AsH(3). The vapor mixtures deposit coordination compounds, with the III and V elements in 1:1 atomic proportions. These compounds decompose to the corresponding III-V semiconductor. This method results in stoichiometric films, when deposition temperatures and pressures are kept low enough to minimize side reactions.

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