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Twin Tunnel Diode Inverter Circuit

IP.com Disclosure Number: IPCOM000097810D
Original Publication Date: 1961-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Eardley, DB: AUTHOR

Abstract

The circuit utilizes the combined volt-ampere characteristics of two tunnel diodes along with a transistor to obtain signal inversion with large voltage gain.

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Twin Tunnel Diode Inverter Circuit

The circuit utilizes the combined volt-ampere characteristics of two tunnel diodes along with a transistor to obtain signal inversion with large voltage gain.

The circuit comprises an emitter follower transistor T1 and tunnel diodes D1 and D2 connected in opposed parallel circuit arrangement with each other in the output circuit of T1. When diodes D1 and D2 are biased by the forward voltage drop of a conventional diode D3, a very linear negative resistance region is obtained for the combined diode characteristic curve. As diode D1 inverts the output signal of T1, this characteristic of linearity substantially reduces the criticalness ordinarily present when switching between the stable states of a tunnel diode. Moreover, this combined operating characteristic enables the circuit to provide a large voltage gain. Thus, if the input signal is any positive voltage within a range extending from nearly zero voltage up to several times the nominal up signal level +V, the output signal is very close to the nominal down signal level, i. e., -V. The converse is true if the input signal is at a down level.

This feature is even more evident if several such circuits are cascaded. The signal level at the output of the last stage is exactly at the nominal signal level, i.
e., either +V or -V.

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