Browse Prior Art Database

Parallel Tunnel Diode

IP.com Disclosure Number: IPCOM000097815D
Original Publication Date: 1961-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Rymaszewski, EJ: AUTHOR

Abstract

This circuit has an improved negative resistance characteristic and is especially suitable for use as a three stable state device.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Parallel Tunnel Diode

This circuit has an improved negative resistance characteristic and is especially suitable for use as a three stable state device.

A pair of tunnel diodes 20 and 22 (upper right) are connected in parallel and poled in opposite directions. Battery 2a is connected in series opposed relation with respect to diode 22. Connected across the combination is an output terminal pair 26 such that a current-voltage relation 28 (upper left) appears at the output terminals. This relation is the algebraic summation of the individual diode characteristic curves 20' and 22'.

The algebraic combination steepens the stable and linearizes the unstable operating regions of the combined curve. The linear stable operating regions permit the circuit to be used as a level setter. The linear unstable operating region improves the negative resistance performance.

As shown at the lower left, battery 24 can further elongate the combined curve and thus establish a third stable operating region a in addition to the normally existing stable operating regions b and c. With three stable states available, the circuit may be employed in ternary and fully asynchronous binary logic systems.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]