Browse Prior Art Database

Field Effect Photodetector And Transistor

IP.com Disclosure Number: IPCOM000097904D
Original Publication Date: 1961-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Kessler, KH: AUTHOR [+3]

Abstract

The current flowing through a semiconductor bar, immersed in a liquid electrolyte, can be modified by the throttling action of a field effect. This is produced by the application of a reverse bias across the semiconductor-electrolyte interface.

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Field Effect Photodetector And Transistor

The current flowing through a semiconductor bar, immersed in a liquid electrolyte, can be modified by the throttling action of a field effect. This is produced by the application of a reverse bias across the semiconductor- electrolyte interface.

The illumination of the semiconductor with light, under these conditions, gives rise to an increased flow of current through the reversely biased interface. If this current is made to flow through a high resistance, the potential drop across the resistor drops the biasing voltage across the interface. The throttling action of the field effect inside the semiconductor bar is reduced and more current flows through the bar. This increased current is superimposed on the photocurrent produced by the incident light. The quantum gain of the detector can exceed unity.

A field effect detector or transistor, based on a bar of Si immersed in 8% H(2)SO(4), is shown. It illustrates the general principle of semi conductor electrolyte field effect devices. The device consists of a bar of n type Si (e ~ 500 omega cm) with nickel plated ohmic contacts 1 and 2. The bar passes through a plastic container 3, containing 8% H(2)SO(4) in H(2)O, and an inert electrode loop 4. Typically, a change in current of 3 amps, indicated by ammeter 5, results in a current change of 8I as indicated by ammeter 6. Thus, when the Si, H(2)SO(4) interface is reversely biased, the device exhibits a current gain of eight....