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Non-Coincident Selection Of Designated Locations Using Thin Films

IP.com Disclosure Number: IPCOM000097947D
Original Publication Date: 1961-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Keefe, GE: AUTHOR

Abstract

A continuous strip of thin magnetic film 10 is used as a basic binary storage cell in a memory where coincident selection is achieved by sequential cur rent techniques.

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Non-Coincident Selection Of Designated Locations Using Thin Films

A continuous strip of thin magnetic film 10 is used as a basic binary storage cell in a memory where coincident selection is achieved by sequential cur rent techniques.

The film strip 10 is coupled by strip conductors X, Y and S to define three portions 12, 14 and 16 for the binary storage cell. Portions 12, 14 and 16, being part of strip 10, have easy axes of magnetization 18. 1, 18.2 and 18.3, respectively, aligned with one another. A binary 0 is stored when the magnetization of portion 14 of film 10 is pointed from right to left (upper left). A binary 1 is written into film 10 by first applying an impulse to conductor X which causes the magnetization of portions 12 and 16 to reverse (upper right), Portions 12 and 16 apply a bias field to portion 14 which is incapable, by itself, of switching portion 14 from left to right.

Full selection is achieved by applying a current to winding Y after termination of the current to winding X. Energization of the Y conductor applies a field to the portion 14 of film 10 which is insufficient, by itself, of switching the magnetization of portion 14. It does switch the magnetization of portion 14, with the conjoint application of the bias provided by portions 12 and 16, to store a binary 1 (lower left).

A binary 0 is stored in the same manner by energizing the X and Y windings with opposite polarity pulses. Energization of the X winding to store a binary 0 revers...